MLD850-10S9N Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

9.0mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 10 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -60 to +60 °
Storage temperature Tstg -70 to +85 °

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po - 10 - mW Kink free
Threshold current Ith - 35 50 mA -
Operating current Iop 65 75 85 mA Po=10mW
Operating voltage Vop - 1.8 2.0 V Po=10mW
Lasing wavelength lp 845 850 855 nM Po=10mW
Beam divergence q // 8 10 12 ° Po=10mW
Beam divergence q ^ 25 35 40 ° Po=10mW
Monitor current Is 0.8 - 3.5 mA Po=10mW

MeshTel INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications are subject to change without notice.


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