MLD830-150S9N Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

9.0mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 150 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +50 °
Storage temperature Tstg -40 to +85 °

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po - 150 - mW Kink free
Threshold current Ith - 50 70 mA -
Operating current Iop - 185 220 mA Po=150mW
Lasing wavelength lp 815 830 840 nm Po=150mW
Beam divergence q // 5 7 11 ° Po=150mW
Beam divergence q ^ 12 18 25 ° Po=150mW
Differential efficiency SE 0.7 1.0 - mW/mA -
Monitor current Im 0.15 0.5 2.0 mA Po=150mW
Astigmatism Ac - 10 - µm Po=150mW

MeshTel INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.


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