MLD808-200M9N Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

Gain Guided - 9mm Package
Internal Circuit & Pin Connections
Bottom View

Optical output power Po 200 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 15 V
Operating temperature Topr -10 to +40 °
Storage temperature Tstg -30 to +70 °

Optical and Electrical Characteristics (Tc=25ºC)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po -- -- 200 mW Kink free
Threshold current Ith 150 200 -- mA -
Operating current Iop - 350 500 mA Po=200mW
Operating voltage Vop -- 1.9 3.0 V Po=200mW
Slope efficiency h 0.65 0.9 -- mW/mA -
Lasing wavelength lp 803 808 811 nm Po=200mW
Beam divergence q // 6 8 10 ° Po=200mW
Beam divergence q ^ -- 28 40 ° Po=200mW
Monitor current Im -- 0.3 -- mA Po=200mW

INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.


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