MLD808-100S5N Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

5.6mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 110 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +50 °
Storage temperature Tstg -40 to +85 °

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po - 100 - mW Kink free
Threshold current Ith - 40 60 mA -
Operating current Iop - 125 160 mA Po=100mW
Operating voltage Vop - 2.0 2.4 V Po=100mW
Lasing wavelength lp 805 808 811 nM Po=100mW
Beam divergence q // 6 8 10 ° Po=100mW
Beam divergence q ^ 12 16 20 ° Po=100mW
Slope efficiency h 0.8 1.2 - mW/mA CW
Monitor current Is 0.1 0.3 0.6 mA Po=100mW
Astigmatism As - 3 - µm Po=100mW

INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.


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