MLD785-8S5N Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

5.6mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 8 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +60 °
Storage temperature Tstg -40 to +85 °

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po - - 8 mW Kink free
Threshold current Ith 15 25 40 mA CW
Lasing wavelength lp 770 785 800 nm Po=5mW
Operating current Iop - 40 55 mA Po=5mW
Monitor current Is 1.0 2.0 3.5 mA Po=5mW
Beam divergence q // 7.0 8.5 11.0 ° Po=5mW
Beam divergence q ^ 20 25 30 ° Po=5mW
Differential efficiency h 0.20 0.35 0.5 mW/mA -
Astigmatism As - - 10 µm Po=3mW

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Disclaimer: The specifications are subject to change without notice.


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