MLD658-35S5P Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit P type connection   pin_out.gif

5.6mm Package
Internal Circuit & Pin Connection
Bottom View
Optical output power Po 35 mW
Pulse optical output power
Pulse width = 100 ns
Duty = 50%		 Po (pulse) 50* mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +60 °C
Storage temperature Tstg -40 to +85 °C

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po 35 - - mW Kink free
Threshold current Ith 30 45 70 mA -
Operating current Iop - 85 95 mA Po=30mW
Operating voltage Vop 2.1 2.6 3.0 V Po=30mW
Slope efficiency h 0.5 0.75 1.0 mW/mA 18mW / I (24mW)-I (6mW)
Lasing wavelength lp 645 658 665 nm Po=30mW
Beam divergence q // 7 8.5 10.5 deg Po=30mW
Beam divergence q ^ 18 22 26 deg Po=30mW
Monitor current Is 0.05 0.3 1.5 mA Po=30mW, VR(PD)=5V

INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.

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