MLD655-30S5N Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

5.6mm Package
Internal Circuit & Pin Connection
Bottom View
Optical output power Po 30 mW
Pulse optical output power Po (pulse) 50* mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +60 °C
Storage temperature Tstg -40 to +85 °C
*Notes: Pulse condition     Pulse width: 50 µs    Duty cycle: 50%

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po 30 - - mW Kink free
Threshold current Ith - 45 70 mA -
Operating current Iop - 80 110 mA Po=30mW
Operating voltage Vop - 2.4 2.8 V Po=30mW
Differential efficiency h - 0.8 - mW/mA -
Lasing wavelength lp - 655 665 nm Po=30mW
Beam divergence q // 6 7 10 deg Po=30mW
Beam divergence q ^ 15 23 28 deg Po=30mW
Monitor current Is 0.01 0.03 - mA Po=30mW

INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.

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