MLD635-10S9N3 Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

9.0mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 10 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +60 °C
Storage temperature Tstg -40 to +85 °C

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po 10 - - mW Kink free
Threshold current Ith - 40 60 mA -
Operating current Iop - 55 75 mA Po=10mW
Operating voltage Vop - 2.2 2.4 V Po=10mW
Slope efficiency h 0.4 0.65 0.90 mW/mA 6mW / I (8mW)-I (2mW)
Lasing wavelength lp 630 635 640 nm Po=10mW
Beam divergence q // 6 8 11 ° Po=10mW
Beam divergence q ^ 25 31 36 ° Po=10mW
Monitor current Is 0.05 0.17 0.30 mA Po=10mW, VR(PD)=5V

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Disclaimer: The specifications are subject to change without notice.


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