MLD635-10S9N2 Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit N type connection   pin_out.gif

9.0mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 10 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +40 ºC
Storage temperature Tstg -40 to +85 ºC

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Optical output power Po 10 - - mW Kink free
Threshold current Ith - 35 60 mA -
Operating current Iop - 55 80 mA Po=10mW
Operating voltage Vop - 2.2 2.4 V Po=10mW
Slope efficiency h - 0.5 - mW/mA -
Lasing wavelength lp - 635 640 nm Po=10mW
Beam divergence q // 6 8 10 deg Po=10mW
Beam divergence q ^ 25 30 35 deg Po=10mW
Monitor current Is 0.05 0.15 0.4 mA Po=10mW

INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications may be subject to change without notice.


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