MLD1064-100S9P Laser Diode Specifications

Absolute Maximum Ratings (Tc=25°C)

Item Symbol Value Unit P type connection   pin_out.gif

9.0mm Package
Internal Circuit & Pin Connection
Bottom View

Optical output power Po 100 mW
Laser diode reverse voltage VR(LD) 2 V
Photodiode reverse voltage VR(PD) 30 V
Operating temperature Topr -10 to +60 °
Storage temperature Tstg -70 to +85 °

Optical and Electrical Characteristics (Tc=25°C)

Item Symbol Min. Typ. Max. Unit Test Condition
Lasing Aperutre A - 1.5 X 3 - µm2 -
Optical output power Po 100 - - mW Kink free
Threshold current Ith - 35 - mA -
Operating current Iop - 200 240 mA Po=100mW
Operating voltage Vop - 2.0 - V Po=100mW
Lasing wavelength lp 1055 1065 1075 nM Po=100mW
Beam divergence q // 8 10 12 ° Po=100mW
Beam divergence q ^ 30 35 40 ° Po=100mW
Slope efficiency h - 0.5 - mW/mA CW
Monitor current Is 0.2 0.8 1.3 mA Po=100mW

INTELITE, INC. USA
Tel: 775 267 5959, Fax: 775 267 5958
Disclaimer: The specifications are subject to change without notice.


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